Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

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A tensile-strained GeSn/SiGeSn multiple quantum well catherine lansfield ombre rainbow clouds eyelet curtains (MQW) laser wrapped in Si3N4 liner stressor is designed and characterized theoretically.A biaxial tensile strain is introduced into the GeSn/SiGeSn MQW laser by the Si3N4 liner stressor.The boosting effects of tensile strain on the threshold current density Jth and optical gain in GeSn/SiGeSn lasers are attributed to the modulation of energy band structure and copyright distribution in the GeSn wells.Tensile-strained Ge0.

90Sn0.10/Si0.161Ge0.695Sn0.

144 MQW laser wrapped in 500 nm Si3N4 liner stressor achieves a Jth reduction from 476 to 168 A/cm2 and a significant enhancement of optical gain, as compared to the relaxed control device without Si3N4.The design of read more GeSn/SiGeSn MQW structure wrapped in Si3N4 liner stressor provides a practical way to realize high performance GeSn based mid-infrared laser.